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In2O3-based multicomponent metal oxide films and their prospects for thermoelectric applications
Affiliation:1. School of Material Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, 500-712 Gwangju, Republic of Korea;2. Department of Theoretical Physics, State University of Moldova, Chisinau, Republic of Moldova;1. Division of Advanced Materials Engineering, Chonbuk National University, Jeonbuk 561-756, Republic of Korea;2. Hydrogen and Fuel Cell Research Center, Chonbuk National University, Jeonbuk 561-756, Republic of Korea;1. Instituto de Física, Universidade Federal de Goiás, 74001-970 Goiânia, GO, Brazil;2. Universidade Federal Rural do Semi-Árido, 59900-000 Pau dos Ferros, RN, Brazil;3. Departamento de Física, Universidade Federal do Ceará, 60455-760 Fortaleza, CE, Brazil;1. State Key Laboratory of Materials-Orient Chemical Engineering, College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, PR China;2. Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050, PR China;1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China;2. High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, Anhui, China
Abstract:Thermoelectric properties of In2O3–SnO2-based multi-component metal oxide films formed by spray pyrolysis method are studied. It is shown that the introduction of additional components such as gallium and zinc can control the parameters of the deposited layers. At that, the doping with gallium is more effective for optimization of the efficiency of the thermoelectric conversion. The explanation of the observed changes in the electro-physical and thermoelectric properties of the films at the composition change is given. It is found that the main changes in the properties of multicomponent metal oxide films take place at concentrations of dopants which correspond to their limit solubility in the dominant oxide.
Keywords:Thin films  Doping  Gallium  Zinc  Thermoelectricity  Optimization
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