Identification of Semiconductive Patches in Thermally Processed Monolayer Oxo‐Functionalized Graphene |
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Authors: | Zhenping Wang,Qirong Yao,Christof Neumann,Felix B rrnert,Julian Renner,Ute Kaiser,Andrey Turchanin,Harold J. W. Zandvliet,Siegfried Eigler |
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Affiliation: | Zhenping Wang,Qirong Yao,Christof Neumann,Felix Börrnert,Julian Renner,Ute Kaiser,Andrey Turchanin,Harold J. W. Zandvliet,Siegfried Eigler |
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Abstract: | The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo‐functionalized graphene (oxo‐G), was used to study its thermal disproportionation. We present the impact of annealing on the electronic properties of a monolayer oxo‐G flake and correlated the chemical composition and topography corrugation by two‐probe transport measurements, XPS, TEM, FTIR and STM. Surprisingly, we found that oxo‐G, processed at 300 °C, displays C?C sp3‐patches and possibly C?O?C bonds, next to graphene domains and holes. It is striking that those C?O?C/C?C sp3‐separated sp2‐patches a few nanometers in diameter possess semiconducting properties with a band gap of about 0.4 eV. We propose that sp3‐patches confine conjugated sp2‐C atoms, which leads to the local semiconductor properties. Accordingly, graphene with sp3‐C in double layer areas is a potential class of semiconductors and a potential target for future chemical modifications. |
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Keywords: | electrical transport properties graphene oxide microscopy oxo-functionalized graphene semiconductors |
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