| 摘 要： | In this work, a hetero-epitaxial Al0.49In0.51As/Ga0.47In0.53 As metamorphic high electron mobility transistor(mHEMT) grown by metal–organic chemical vapor deposition(MOCVD) on p-type silicon substrate has been successfully demonstrated. A novel AlGaAs/Al As period multiple quantum well(MQW) composite buffer scheme is developed to effectively tune the leakage current from the buffer layer. The quantized room-temperature Hall mobility of the twodimensional electron gas(2DEG) is larger than 7800 cm2/V·s, with an average sheet carrier density of 4.6×1012cm-2.Two-stage electron beam(EB) lithography technology by a JBX-6300 e-beam lithography system is developed to realize a 0.13-μm m HEMT device on Si substrate. A maximum transconductance Gm of up to 854 mS/mm is achieved, and is comparable to that of m HEMT technology on Ga As substrate with the same dimension. The fTand fmax are 135 GHz and120 GHz, respectively.
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