Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

In GaN quantum dot is a promising optoelectronic material,which combines the advantages of low-dimensional and wide-gap semiconductors.The growth of In GaN quantum dots is still not mature,especially the growth by metal–organic–vapor phase epitaxy(MOVPE),which is challenge due to the lack of 、itin-situ monitoring tool.In this paper,we reviewed the development of In GaN quantum dot growth by MOVPE,including our work on growth of near-UV,green,and red In GaN quantum dots.In addition,we also introduced the applications of In GaN quantum dots on visible light emitting diodes.