| Abstract: | Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy(MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for Ga N,and the growth rate of Ga N micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of Ga N, the selective area growth of In Ga N on the patterned template would induce the deposition of In Ga N polycrystalline particles on the patterned SiO2 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface. |
