The effects of La doping on luminescence properties of PbWO4 single crystal |
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Authors: | Y.L. Huang Z.Y. Man |
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Affiliation: | The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, People's Republic of China |
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Abstract: | X-ray-excited luminescence (XEL), thermoluminescence (TL), photoluminescence under excitation of UV light and X-ray photoelectron spectroscopy (XPS) measurements were conducted on PbWO4 (PWO) single crystals doped with La3+ at a series of concentration levels. With the increase of doping levels, the intensity of PWO in the XEL or the excitation-emission spectra was found to decrease accordingly, especially in the case of heavy doping. TL peaks in the range from room temperature to 200°C disappeared after the doping with La3+. A splitting of the La3d XPS peak in the heavy La3+-doped samples was observed and proposed to be responsible for that. At a high doping level, La3+ would occupy W-sites besides Pb-sites and thus induce a self-compensation via pairs [(LaW3+)″′−(LaPb3+)•]−(VO)•• or clusters [3(LaPb3+)•−(LaW3+)″′], where nonradiative recombination was previously reported to occur. The mechanism of the influence on luminescence was also discussed in this paper. |
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Keywords: | PbWO4 single crystal La3+ doping Luminescence X-ray-excited luminescence |
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