Trends in the structure and bonding in the layered platinum dioxide and dichalcogenides PtQ2 (Q=O, S, Se, Te) |
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Authors: | D. Dai M.-H. Whangbo C. Soulard S. Jobic |
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Affiliation: | a Department of Chemistry, North Carolina State University, Raleigh, NC 27695-8204, USAb Laboratoire de Chimie des Solides, Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, BP. 32229, 44322 Nantes Cedex 03, France |
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Abstract: | The structure and bonding of the layered platinum dioxide and dichalcogenides PtQ2 (Q=O, S, Se, Te) were analyzed on the basis of electronic band structure calculations using the full potential linearized augmented plane wave method. We examined why the c/a ratio in PtQ2 is considerably small compared with the value expected from the consideration of closely packed Q atoms (i.e., ∼1.40 vs. 1.67), and identified the electronic factor that causes the semiconducting properties in PtO2 and PtS2, the semimetallic property in PtSe2, and the metallic property in PtTe2. To a first approximation, the oxidation states of oxygen and platinum in PtO2 can be regarded as -2 and +4, respectively, but this picture is not applicable to PtTe2. As the ligand Q is changed from O to S to Se to Te, the energy gap between the Pt 5d and the ligand p levels gradually decreases, so that the ionic character of the Pt-Q bonding in PtQ2 is gradually diminished. |
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Keywords: | Layered platinum dioxide Layered platinum dichalcogenides Structure and bonding Electronic band structures |
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