Syntheses, structures, optical properties, and theoretical calculations of Cs2Bi2ZnS5, Cs2Bi2CdS5, and Cs2Bi2MnS5 |
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Authors: | Fu Qiang Huang |
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Affiliation: | Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113, USA |
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Abstract: | Three new compounds, Cs2Bi2ZnS5, Cs2Bi2CdS5, and Cs2Bi2MnS5, have been synthesized from the respective elements and a reactive flux Cs2S3 at 973 K. The compounds are isostructural and crystallize in a new structure type in space group Pnma of the orthorhombic system with four formula units in cells of dimensions at 153 K of a=15.763(3), b=4.0965(9), c=18.197(4) Å, V=1175.0(4) Å3 for Cs2Bi2ZnS5; a=15.817(2), b=4.1782(6), c=18.473(3) Å, V=1220.8(3) Å3 for Cs2Bi2CdS5; and a=15.830(2), b=4.1515(5), c=18.372(2) Å, V=1207.4(2) Å3 for Cs2Bi2MnS5. The structure is composed of two-dimensional ∞2Bi2MS52−] (M=Zn, Cd, Mn) layers that stack perpendicular to the 100] axis and are separated by Cs+ cations. The layers consist of edge-sharing ∞1Bi2S66−] and ∞1MS34−] chains built from BiS6 octahedral and MS4 tetrahedral units. Two crystallographically unique Cs atoms are coordinated to S atoms in octahedral and monocapped trigonal prismatic environments. The structure of Cs2Bi2MS5, is related to that of Na2ZrCu2S4 and those of the AMM′Q3 materials (A=alkali metal, M=rare-earth or Group 4 element, M′= Group 11 or 12 element, Q=chalcogen). First-principles theoretical calculations indicate that Cs2Bi2ZnS5 and Cs2Bi2CdS5 are semiconductors with indirect band gaps of 1.85 and 1.75 eV, respectively. The experimental band gap for Cs2Bi2CdS5 is ≈1.7 eV, as derived from its optical absorption spectrum. |
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Keywords: | Cesium bismuth metal sulfides Crystal structure Synthesis Band gap |
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