Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1?x gate dielectrics on Ge 期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Band alignment and interfacial properties of atomic layer deposited (TiO₂)_x(Al₂O₃)_1?x gate dielectrics on Ge

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