Low temperature ion beam irradiation of gallium films

Ga-films in the amorphous, the -Ga, and the -Ga phase have been irradiated at low temperatures with Ar-ions and He-ions at energies 275 keV and 200 keV, respectively. The -phase can be transformed into the amorphous state by Ar-ion irradiation but not by He-ion irradiation. Rather small Ar-fluences <10¹⁴ ions/cm² are sufficient. The -phase is stable with respect to irradiation with Ar- and He-ions at small fluences. The as-quench condensed amorphous phase is stable with respect to Ar-ion irradiation, however, it transforms into the -phase at He-ion irradiation. The different short range order of the - and -phase is thought to be responsible for the different behavior at ion irradiation.This work is dedicated to Professor Dr. S. Methfessel on the occasion of his 60th birthday