| GaAs中N等电子陷阱的研究 |
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| 引用本文： | 赵学恕,李国华,韩和相,汪兆平,唐汝明,车荣钲.GaAs中N等电子陷阱的研究[J].物理学报,1984,33(4):588-592. |
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| 作者姓名： | 赵学恕 李国华 韩和相 汪兆平 唐汝明 车荣钲 |
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| 作者单位： | (1)中国科学院半导体研究所; (2)中国科学院物理研究所 |
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| 摘 要： | 对离子注N的GaAs样品作了77K的静压光致荧光研究。观察到了N陷阱中心元胞势束缚激子Nx的发光光谱及畸变势束缚激子NT的发光峰。测量NX能级的压力系数为2.8meV/kbar,常压下N的共振态高于导带边179meV。讨论了N等电子陷阱的电声子耦合强度及有效束缚激子半径随压力的变化关系。
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| 收稿时间： | 1983-10-27 |
A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GaAs |
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| ZHAO XUE-SHU,LI GUO-HUA,HAN HE-XIANG,WANG ZHAO-PING,TANG RU-MING and CHE RONG-ZHEN.A STUDY OF NITROGEN ISOELECTRONIC TRAPS IN GaAs[J].Acta Physica Sinica,1984,33(4):588-592. |
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| Authors: | ZHAO XUE-SHU LI GUO-HUA HAN HE-XIANG WANG ZHAO-PING TANG RU-MING and CHE RONG-ZHEN |
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| Abstract: | The photoluminescences of nitrogen implanted GaAs samples at 77 K have been studied under high pressures. The luminescence peaks of excitons Nx bound to N trap central cell potential and excitons NT bound to deformation potential were observed. The exprimen-tal value of pressure coefficient of Nx level is 2.8 meV/kbar. Under the atmospheric pressure, the N resonant state is at 179 meV above the conduction band edge. The pressure behaviors of electron-phonon coupling strength of N isoelectronic trap and effective radius of bound exciton are discussed. |
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