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Morphology of heteroepitaxial β-SiC films grown on Si(111) through high-vacuum chemical vapor deposition from hexane vapors |
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| Authors: | L. K. Orlov Yu. N. Drozdov V. B. Shevtsov V. A. Bozhenkin V. I. Vdovin |
| Affiliation: | (1) Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Research Physicotechnical Institute, Nizhni Novgorod State University, pr. Gagarina 23/3, Nizhni Novgorod, 603950, Russia;(3) Institute for Chemical Problems of Microelectronics, Bol’shoĭ Tolmachevskiĭ per. 5, Moscow, 109017, Russia |
| Abstract: | The characteristics of cubic silicon carbide films grown on silicon through high-vacuum chemical vapor deposition (HVCVD) from hexane vapors are investigated using scanning probe microscopy and x-ray diffraction. The surface morphology and structure of the films are analyzed as a function of the thickness of the deposited films and the nature of the substrate (silicon, sapphire). The role of different diffusion fluxes arising in the structure and the related possible mechanisms of growth of β-SiC layers on silicon substrates are discussed. |
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