A variable electron beam and its irradiation effect on optical and electrical properties of CdS thin films |
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Authors: | M Singh Y K Vijay B K Sharma |
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Institution: | (1) Department of Physics, University of Rajasthan, Jaipur, 302 004, India |
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Abstract: | A low energy electron accelerator has been constructed and tested. The electron beam can operate in low energy mode (100 eV
to 10 keV) having a beam diameter of 8–10 mm. Thin films of CdS having thickness of 100 nm deposited on ITO-coated glass substrate
by thermal evaporation method have been irradiated by electron beam in the above instrument. The I–V characteristic is found to be nonlinear before electron irradiation and linear after electron irradiation. The TEP measurement
confirms the n-type nature of the material. The TEP and I–V measurements also confirm the modification of ITO/CdS interface with electron irradiation.
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Keywords: | Electron irradiation semiconductor optical energy band gap and absorption characteristics thermo-electric power and conductivity |
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