石英衬底阳极氧化铝膜的制备及其光致发光的研究

报道了用15wt％H2SO4为电解液，在恒温0℃，40V电压条件下制备阳极氧化铝膜，用原子力显微镜观察其形貌，表明在简单条件下在石英衬底上制备了致密的氧化铝微晶膜。研究了不同电压条件下制备的氧化铝膜的常温光致发光，并监测了其激发光谱，发现其常温光致发光相对强度和发射峰位置与阳极氧化电压关系密切，有相对强度变小和发射峰位置红移的趋势，在40V电压条件下出现了356nm新的发射峰，而其不同的发射峰激发光谱都为210nm，说明其来源存在关联。详细分析了40V电压下的阳极氧化铝膜中出现的356，386nm近紫外发射，并认为其发光来源于与F心和F^ 心有关的氧缺陷。

Preparation of Anodic Al2O3 Films on SiO2 Substrate and Their hotoluminescence Properties

300 nm thick aluminum films were deposited on SiO2 substrates by heat evaporation. At 0 degrees C, 40 V DC voltage, the authors successfully prepared high density Al2O3 films by anodic oxidation on SiO2 substrates with 15 wt% H2SO4 as electrolyte, and AFM was employed to study the film surface morphology. At room temperature the authors measured the photoluminescence spectrum of Al2O3 films prepared at different anodic voltages excited by Xe lamp. In addition, the authors monitored their excitation spectra of different emission peaks, and the authors found that the relative emission intensity gets weaker and shifts to lower energy at higher anodic voltage. At 40 V anodic voltage the authors observed new 356 nm ultraviolet emission, which has the same 210 nm excitation emission. Based on the discussion of the relative intensity of the PL spectra of anodic alumina at different voltages, the authors suggest that F and F+ oxygen vacancy defects were responsible for the observed 356 and 386 nm ultraviolet photoluminescence from Al2O3 anodic film at 40 V voltage.