Three-dimensional CMOS NAND with three stacked channels |
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| Authors: | Roos G Hoefflinger B |
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| Institution: | Inst. for Microelectron., Stuttgart, Germany; |
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| Abstract: | A process-inherent NAND2 device is presented for a three-dimensional CMOS integration with epitaxial lateral overgrowth and chemo-mechanical polishing. The required 'OR' function of the two PMOS transistors is achieved by one silicon volume, which is controlled by a back gate and a conventional front gate. Almost symmetrical characteristics are measured for the front and the back gates.<> |
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