Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations

The electronic structure of Ge/RbF/GaAs(100) system has been calculated using a slab model and the LCAO method. This system, with possible applications in microelectronics, is a model one with perfectly epitaxial interfaces, little is known however about their reactivity. In these calculations the reactive contacts were postulated and modelled. The obtained results, compared with those of trial calculations for similar non-interacting system, show the appearance of a rich spectrum of interface states at the contacts. They are compared with known experimental results and their possible effects are discussed.