An interpretation of dlts spectra of Al/Si3N4/ultrathin SI/GaAs structures — Effect of quantum well or interface states? |
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Authors: | J Bartoš E Pinčík I Thurzo O E Balvinskij J Ivančo |
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Institution: | 1. Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 84128, Bratislava, Slovak Republic 2. Institute of Microelectronics Technology and High Purity Materials, Moscow district 142 432, Chernogolovka, Russia
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Abstract: | We discuss DLTS andC-V measurements on Al/Si3N4/Si(2nm)/n-GaAs (≈ 5×1017 cm?3) structures. Three discrete deep traps superimposed on a U-shaped interface-state continuum have been identified, with respective thermal energies:E c?0.53 eV,E c?0.64 eV, andE v+0.69 eV. The second one (0.64 eV) is presented as an electric field sensitive level, its enhanced phonon-assisted emission resulting in a rapid shift of the corresponding DLTS peak to lower temperatures, as the applied (negative) reverse bias voltage increases. An interpretation through emission from the quantum well, introduced by means of the intermediate ultrathin Si layer, has failed. |
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