Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator |
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| Authors: | Hyung-Wook Choi Beom-Joo Hong Seung-Kyu Lee Kyung-Hwan Kim Yong-Seo Park |
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| Institution: | Department of Electrical and Information Engineering, Kyungwon University, San 65, Bokjung-dong, Sujung-gu, Seongnam 461701, Gyeonggi-do, Republic of Korea |
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| Abstract: | The zincgallate (ZnGa2O4) phosphor thin film was grown using RF magnetron sputtering system at various process parameters. A ZnGa2O4 phosphor thin film was deposited on Si(1 0 0) substrate and annealed by a rapid thermal processor (RTP). The X-ray diffractometer (XRD) patterns indicate that the Mn-doped ZnGa2O4 phosphor thin film shows a (3 1 1) main peak and a spinel phase. A ZnGa2O4 phosphor thin film has better crystallization due to increased substrate, annealing temperature and deposition time. Also the ZnGa2O4:Mn phosphor thin film shows green emission (510 nm, 4T1→6A1), and the ZnGa2O4:Cr phosphor thin film shows red emission (705 nm, 4A2→4T2). |
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| Keywords: | ZnGa2O4 Thin film RF magnetron sputter Cathodoluminescence(CL) |
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