Photoemission of graded-doping GaN photocathode |
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| Authors: | Fu Xiao-Qian Chang Ben-Kang Wang Xiao-Hui Li Biao Du Yu-Jie and Zhang Jun-Ju |
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| Institution: | Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China; School of Information Science and Engineering, University of Jinan, Jinan 250022, China |
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| Abstract: | We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×1017 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile. |
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| Keywords: | GaN photocathode graded-doping photoemission quantum efficiency |
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