VOx薄膜的制备、电阻-温度特性及结构研究

VO2是一种热致相变材料.发生相变时,VO2的电阻、红外光透过率、反射率都会发生显著变化.采用直流反应磁控溅射法,通过改变氧氩比(O2:Ar)、工作气压、衬底温度等制备工艺参数,研究了工艺参数对VOx薄膜的结构、电阻-温度性能的影响.结果表明,当氧氩比为1.0:15、工作气压为2.0Pa时,制备的薄膜中VO2的含量较多;衬底温度为250℃时,制备的VOx薄膜的电阻一温度突变性能最佳.

Preparing, Resistance-Temperature Characteristics and Structure of VOx Thin Films

Vanadium dioxide (VO2) is a kind ofthermochromatic material. When phase transformation occurs, its resistance, optical transmittance and refiectivity will be changed obviously. Some preparing parameters, such as gas fiow ratio of argon to oxygen, sputtering atmospheric pressure and substrate temperature, are changed by using a direct current reactive magnetron sputtering method. The effect of those preparing parameters on the structure and resistance-temperature characteristics of a V02 film is studied. The result shows that when the ratio of argon to oxygen is 1.0: 15 and the gas pressure is 2.0Pa, the prepared film contains mOTe V02; and when the substrate temperature is 250 "C , the prepared V02 film has its best resistance-temperature abrupt capability.