Infrared angular spectroscopy characterization of epitaxial layers of n-type silicon grown on N+ or P+ substrates

Summary In this paper the technique of infrared angular spectroscopy applied to the characterization of epitaxial layers ofn-type silicon grown on N⁺ or P⁺ substrates is illustrated. Some results are reported and discussed concerning films having a free-carrier concentration ranging from 10¹⁴ cm⁻³ to 10¹⁷ cm⁻³ and thickness of the order of 10 μm. A significant comparison with results obtained by other techniques (four-point probe, spreading resistance,C−V plots, etc.) is performed and a few simple conclusions are drawn. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.