Low-frequency noise properties of dynamic-threshold (DT) MOSFET's

This paper shows that MOSFET operated in dynamic-threshold (DT) mode (V_body=V_gate) is more suitable for low-noise RF/analog applications than those operated in conventional mode (V_body=V_source). Detailed low-frequency noise properties of these two modes of device operation were compared for 0.31-μm gate MOSFET's, in which NMOS's are surface-channel devices (S.C.) and PMOS's are buried-channel (B.C.) devices. Experimental data show that when the devices are biased at same transconductance, the low-frequency noise in DT mode is 30 times lower (at g_m=2.2×10^-3 S) than that in the conventional mode for the B.C. devices and ten times (at g_m=2.0×10 ^-3 S) lower for the S.C. devices