Electron density of states at the edge of the valence band of Cd<sub>0.88</sub>Fe<sub>0.12</sub>Se—A photoemission yield study期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Electron density of states at the edge of the valence band of Cd_0.88Fe_0.12Se—A photoemission yield study

Authors:	Ammar Sarem Bogdan J Kowalski Elias Al-Khoury Nehme

Institution:	^aDepartment of Physics, Faculty of Science, Tishreen University, Aleppo Street, Latakia, Syria ^bInstitute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL 02-668 Warsaw, Poland

Abstract:	The electronic structures of Cd_0.88Fe_0.12Se and CdSe have been investigated by photoemission yield spectroscopy (PYS) in the photon energy range from 5 to 12 eV. The () surfaces were obtained by cleavage under ultrahigh vacuum (UHV) conditions. An Fe-related emission appeared at 0.58 eV above the valence band edge. The freshly cleaved surface of Cd_0.88Fe_0.12Se interacted with ambient atmosphere more strongly than CdSe crystal. Leaving the sample in an UHV chamber at room temperature enabled us to identify surface related features and to observe decrease of the ionization energy E_i, energy threshold E_d and the crystal affinity χ due to change of the surface conditions. Effective density of states, derived from the experimental spectra of Cd_0.88Fe_0.12Se exhibits, in contrast with CdSe, a surface-related feature degenerated with the bulk valence band.

Keywords:	Diluted magnetic semiconductors Photoelectron spectroscopy Cadmium selenide
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