Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO |
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| Authors: | PT Lai JP Xu CX Li CL Chan |
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| Institution: | (1) Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China;(2) Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan, 430074, China |
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| Abstract: | The interface quality and reliability of gate oxides grown on n-/p-type 6H-SiC in diluted NO gas at 1150 °C are investigated. As compared to conventional 100%-NO oxidation, the diluted-NO (50% and 23%) oxidations lead to lower interface-state, border-trap and oxide-charge densities. This is attributed to the fact that carbon-accumulation and carbon-removal rates are closer when oxidation is performed in diluted NO, giving a smoother, less disordered and strained interface. Moreover, less degradation of the diluted-NO samples than 100%-NO samples is observed during high-field stressing (±7 MV/cm), indicating that stronger Si N bonds are created near/at the SiC/SiO2 interface for oxide grown in diluted NO ambient. PACS 85.30.Tv; 81.65.Mq; 81.05.HD; 85.30.De; 73.20.At |
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