Computer simulation of charging the silicon dioxide surface and subsurface layers by electron bombardment |
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| Authors: | V S Kortov S V Zvonarev T V Spiridonova |
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| Institution: | 1.Ural State Technical University in the Name of the First President of Russia B. N. El’tsyn,Ekaterinburg,Russia |
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| Abstract: | A physical model and program of calculating the parameters of charging dielectrics by electron bombardment is described. A
method of computer simulation is used to investigate the main processes of charging the subsurface silicon dioxide layers.
Dependences of the current density, volume charge density, and electric field strength on the material layer depth are calculated
for variable electron beam parameters, irradiation time, and grid potential near the sample surface. |
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