掺杂对铌酸锂晶体非挥发全息存储性能的影响

通过研究掺镁、掺锌和掺铟同成分铌酸锂晶体的紫外-红光双色全息存储性能，发现双色记录响应时间均比单色记录时明显缩短，最多的可减小3个数量级；双色记录灵敏度大幅度提高，在掺镁5 mol.%的晶体中可达到11 cm/J.在掺杂浓度超过抗光损伤阈值的铌酸锂晶体中，均可实现非挥发全息存储.但是，在掺镁、锌样品中，深、浅能级中心上的光栅反相，而在掺铟样品中则表现为同相.这是由于掺杂离子的种类不同，在铌酸锂晶体中形成的缺陷中心也不同所引起的. 关键词： 掺杂 铌酸锂晶体 非挥发 全息存储

Influence of dopants on nonvolatile holographic storage in lithium niobate

By studying the ultraviolet-red two-color holographic storage performances of Mg-, Zn- and In-doped lithium niobate crystals, we found that the response time of the two-color recording could be shortened by as much as 3 orders of magnitude compared to that of one-color recording, and the two-color recording sensitivity was improved significantly, which was measured to be 11 cm/J in the crystal doped with Mg of 5 mol.%. Nonvolatile holographic storage was achieved in the crystals with doping concentrations above the damage-resistant threshold value. However, gratings on the deep centers and the shallow centers were out of phase in Mg- or Zn-doped lithium niobate, while those in In-doped lithium niobate were in phase. We consider that different defects induced by different dopants are responsible for the observed results.