Diagnostics of sputtering processes of carbon and carbides by laser-induced fluorescence spectroscopy in the VUV at 166 nm

Measurements of velocity distributions of C, B, and Si atoms released in sputtering processes from graphite and carbide targets bombarded with noble gas ions in the 1 keV range are described. Laser-induced fluorescence spectroscopy in the VUV is applied. The VUV radiation necessary to excite the sputtered atoms is provided by stimulated anti-Stokes Raman scattering (SARS) in H₂. Surface binding energies are derived from measured velocity distributions; concentrations of sputtered particles, fluxes and sputtering yields are determined.