A two-dimensional numerical analysis of a small geometry MOSFET |
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| Authors: | LA Akers |
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| Institution: | Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588, USA |
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| Abstract: | This paper describes the development of a computer model to simulate small geometry metal-oxide-semiconductor field effect transistors (MOSFETs). The model is developed by obtaining computer generated solutions to the phenomenological equations which describe carrier transport and the electric fields in a semiconductor device. Threshold voltage variations and breakdown effects are also discussed. |
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