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Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy |
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| Authors: | A M Yakunin A Yu Silov P M Koenraad W Van Roy J De Boeck J H Wolter |
| Institution: | a COBRA Inter-University, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB, Eindhoven, The Netherlands;b IMEC, Kapeldreef 75, B-3001, Leuven, Belgium |
| Abstract: | An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn2+3d5+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state. |
| Keywords: | Magnetic semiconductors Manganese Acceptor GaAs Spintronics |
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