The unambiguous identification of vacancy migration stage in resistivity recovery of irradiated metals based on trapping of vacancies at probe impurity atoms

The method of resistivity recovery is a powerful tool for studying point defects in irradiated metals. However, the method is nonspecific with respect to a type (vacancy or interstitial) of investigated defects. To overcome this shortcoming, we made use of opposite signs of excess electric charges of the vacancies and self-interstitial atoms in a lattice. Resistivity loss takes place on trapping of vacancies at impurity atoms if excess charges of the impurity atom and defect are opposite in sign. A way of selecting the impurity atoms with the excess charge opposite in sign to that of vacancies is proposed. The specific evolution of resistivity recovery spectrum induced by vacancy trapping at the selected impurity atoms (probe traps) allows one to unambiguously identify the stage of free long-range vacancy migration.