| 氧分压对化学气相沉积法合成ZnO纳米结构形貌的影响 |
| |
| 引用本文： | 冯程程,周明,吴春霞,马伟伟,李刚,蔡兰. 氧分压对化学气相沉积法合成ZnO纳米结构形貌的影响[J]. 人工晶体学报, 2009, 38(3): 657-661 |
| |
| 作者姓名： | 冯程程 周明 吴春霞 马伟伟 李刚 蔡兰 |
| |
| 作者单位： | 江苏大学光子制造中心,镇江,212013 |
| |
| 基金项目： | 国家自然科学基金重点项目 |
| |
| 摘 要： | 本文利用化学气相沉积(CVD)法在镀有Au(10 nm)膜的单晶Si(100)上制备了ZnO薄膜,并研究了不同的氧分压对ZnO形貌的影响.借助扫描电镜(SEM)、X射线衍射仪(XRD)和透射电子显微镜(TEM)对样品的形貌、结晶质量和晶体生长取向进行了表征.结果表明:当O2分压较小的时候,O2只能与Zn团簇的某些界面发生反应并逐渐结晶生成层状的ZnO微米团簇.当 O2分压较大的时候,ZnO通过二次生长形成由微米柱阵列和表面无序纳米线构成的分层复合结构,并且表面纳米线的密度随着氧分压的增加而增加.高分辨透射电镜(HRTEM)和选取电子衍射(SAED)分析表明,单根纳米线是沿[001]方向生长的ZnO单晶.
|
| 关 键 词： | 氧化锌 化学气相沉积法 氧分压 二次生长, |
Effect of Oxygen Partial Pressure on the Morphology of ZnO Nanostructure Prepared by Chemical Vapor Deposition |
| |
| FENG Cheng-cheng,ZHOU Ming,WU Chun-xia,MA Wei-wei,LI Gang,CAI Lan. Effect of Oxygen Partial Pressure on the Morphology of ZnO Nanostructure Prepared by Chemical Vapor Deposition[J]. Journal of Synthetic Crystals, 2009, 38(3): 657-661 |
| |
| Authors: | FENG Cheng-cheng ZHOU Ming WU Chun-xia MA Wei-wei LI Gang CAI Lan |
| |
| Affiliation: | Center of Photon Fabrication Science and Technology;Jiangsu University;Zhenjiang 212013;China |
| |
| Abstract: | ZnO films were synthesized on Au coated Si(100) substrates by chemical vapor deposition(CVD) method at different oxygen partial pressure.Morphology,crystal structure and growth direction of the as-prepared samples were characterized by SEM,XRD and TEM,respectively.SEM results shows that when oxygen partial pressure is very low,O2 can only react with the surface of Zn cluster and formed micro particle ZnO.When oxygen partial pressure is high,ZnO formed composite structure follows two-step growth process,whic... |
| |
| Keywords: | ZnO CVD oxygen partial pressure two-step growth method |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《人工晶体学报》浏览原始摘要信息 |
|
点击此处可从《人工晶体学报》下载全文 |
|
