溅射气压对非晶Hg1-xCdx Te薄膜微观结构和化学组分的影响（英文）

采用射频磁控溅射制备了非晶态结构的Hg1-xCdxTe薄膜,并利用台阶仪、XRD、原子力显微镜、EDS等分析手段对薄膜生长速率、物相、表面形貌、组分比例进行了研究。实验结果表明,溅射气压对薄膜生长速率、微观结构、表面形貌和化学组分有直接影响。随着溅射气压增大,其生长速率逐渐降低。当溅射气压高于1.1 Pa时,薄膜XRD图谱上没有出现任何特征衍射峰,只是在2θ=23°附近出现衍射波包,具有明显的非晶态特征;当溅射气压小于1.1 Pa时,XRD谱表现为多晶结构。另外,随着溅射气压的增加,薄膜表面粗糙度逐渐减小,而且溅射气压对薄膜组成的化学计量比有明显影响,当溅射气压为1.1 Pa时,薄膜中Hg的组分比最低,而Cd组分比最高。

Effects of Sputtering Pressure on Microstructure and Chemical Composition of Amorphous Hg1-xCdxTe Films

Mercury cadmium telluride films were prepared by RF magnetron sputtering technique at different sputtering pressure on glass substrate. In experiment, X-ray diffraction (XRD), atomic force microscopy (AFM) and energy dispersive spectroscopy (EDS) have been used to characterize the microstructure, surface morphology and chemical composition of Hg1-xCdxTe films. Experimental results show that the growth rate, crystal structure, chemical composition content and surface morphology of the Hg1-xCdxTe films have a strong relation to the sputtering pressure. When increased the sputtering pressure, the growth rate of films decreased. When the sputtering pressure was more than 1.1 Pa, the prepared Hg1-xCdxTe film was amorphous, and when the sputtering pressure was controlled at 0.9 Pa, the films exhibited polycrystalline structure. In addition, the surface roughness (RMS and Ra) of Hg1-xCdxTe films gradually decreased with the increasing of sputtering pressure. The chemical composition of films also varing with different sputtering pressure, the Hg and Hg+Cd content in films reache the lowest, but the Cd content gets to the top at 1.1 Pa.