Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)–SiO₂interface of metal-oxide-semiconductor field effect transistors. Based on the energetics of hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for hydrogen-related degradation may be considerably lower than the previously assumed value of 3.6 eV. Also, hydrogen atoms released from Si–H bonds at the interface by hot electron stress are trapped in bulk silicon near the interface.