| Material removal rate of 6H-SiC crystal substrate CMP using an alumina（Al2O3） abrasive |
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| 引用本文： | 苏建修,杜家熙,马利杰,张竹青,康仁科.Material removal rate of 6H-SiC crystal substrate CMP using an alumina（Al2O3） abrasive[J].半导体学报,2012(10):142-148. |
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| 作者姓名： | 苏建修 杜家熙 马利杰 张竹青 康仁科 |
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| 作者单位： | Henan Institute of Science and Technology;Henan University of Technology;Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education,Dalian University of Technology |
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| 基金项目： | supported by the National Natural Science Foundation of China(No.51075125);the Key Scientific Research Program of Economic and Social Development of Xinxiang City(No.S10004);the Science and Technology Innovation Program of Henan Institute of Science and Technology |
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| 摘 要： | 正The influences of the polishing slurry composition,such as the pH value,the abrasive size and its concentration,the dispersant and the oxidants,the rotational velocity of the polishing platen and the carrier and the polishing pressure,on the material removal rate of SiC crystal substrate(0001) Si and a(0001) C surface have been studied based on the alumina abrasive in chemical mechanical polishing(CMP).The results proposed by our research here will provide a reference for developing the slurry,optimizing the process parameters,and investigating the material removal mechanism in the CMP of SiC crystal substrate.
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| 关 键 词： | SiC crystal substrate alumina abrasive chemical mechanical polishing material removal rate polishing slurry |
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