Electrical properties of GaAs layers irradiated by H4 ions |
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Authors: | V. N. Brudnyi M. A. Krivov A. I. Potapov |
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Affiliation: | (1) V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR |
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Abstract: | The quantities(D) and(T) are studied in n- and p-GaAs, irradiated at T = 300°K by H+ ions (5 MeV). It is shown that the resistance of lightly doped GaAs specimens increases from original values of0 to 109 ·cm upon irradiation by H+ ions (5 MeV) to integral fluxes up to D* – 1015 H+/cm2. For D > D* the layer resistance decreases from 109 ·cm to 1 ·cm at 300°K. It was found that all the GaAs specimens intensely irradiated by H+ ions had p-type conductivity near 300°K. Isochronic annealing of radiation defects was studied in the temperature interval 20–700°C.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 39–43, January, 1982. |
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