| c轴定向氮化铝薄膜的制备 |
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| 引用本文： | 龚辉,范正修. c轴定向氮化铝薄膜的制备[J]. 光学学报, 2002, 22(8): 33-936 |
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| 作者姓名： | 龚辉 范正修 |
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| 作者单位： | 中国科学院上海光学精密机械研究所,上海,201800 |
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| 基金项目： | 德国夫朗和费研究院，中国科学院交流项目资助课题 |
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| 摘 要： | 利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。
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| 关 键 词： | c轴定向 制备 电子回旋共振 化学气相沉积 氮化铝薄膜 |
| 收稿时间： | 2001-06-27 |
Preparation of c-Axis Oriented AlN Film |
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| Gong Hui Fan Zhengxiu. Preparation of c-Axis Oriented AlN Film[J]. Acta Optica Sinica, 2002, 22(8): 33-936 |
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| Authors: | Gong Hui Fan Zhengxiu |
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| Abstract: | The c axis oriented AlN films on Si (100) substrates diameter of 6.35 cm are prepared using N 2, Ar and AlCl 3 vapour via electron cyclotron resonance plasma enhanced chemical vapor deposition. The characterization of film is investigated by means of X ray diffraction (XRD), energy dispersive X ray analysis and scanning electron morphology. The dependences of the c axis orientation of the AlN film on the microwave power, substrate temperature and N 2 flow rate are studied. High quality AlN films of large area and c axis standard deviation less than 5° are obtained. |
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| Keywords: | electron cyclotron resonance (ECR) chemical vapor deposition AlN film |
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