Electron concentration and mobility in In2O3

The electron concentration and mobility in polycrystalline In₂O₃ have been measured as a function of temperature and partial oxygen pressure, in the temperature range from 25 to 700°C. These experimental data are critically compared with literature data. A conduction model is proposed. Theoretical values of the electron concentration as a function of the partial oxygen pressure are reported for temperatures from 700 to 1400°C. An estimate is given for the minimum room temperature “intrinsic” electron concentration in In₂O₃ after a high temperature annealing experiment. It is also shown that interpretations of conductivity values for porous material in terms of carrier concentration only, can be very misguiding.