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Syntesis and structure investigations of nanostructures massive of GaAs |
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| Authors: | R. G. Valeev V. F. Kobziev V. V. Kriventsov N. A. Mezentsev |
| Affiliation: | 1. Physical-Technical Institute, Ural Branch, Russian Academy of Sciences, Izhevsk, 426001, Russia 2. Udmurt State University, Izhevsk, 426034, Russia 3. Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia 4. Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
| Abstract: | A new approach to the synthesis of ordered GaAs nanostructure massives via thermal deposition onto porous aluminum oxide matrices with ordered channel arrangement is described. The geometric characteristics of nanostructures, their structural states, and local atomic structures are studied. Parameters of local atomic structure (e.g., interatomic distances and coordination numbers) are obtained for comparing to the data on GaAs continuous films. |
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