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EXAS study of the promising semiconductor material Ga2Se3 |
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| Authors: | R. G. Valeev V. V. Kriventsov N. A. Mezentsev |
| Affiliation: | 1. Physical-Technical Institute, Ural Branch, Russian Academy of Sciences, Izhevsk, 426001, Russia 2. Udmurt State University, Izhevsk, 426034, Russia 3. Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia 4. Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
| Abstract: | Ga2Se3, a promising material for absorbing layers of high-efficient solar cells, is studied by EXAFS spectroscopy. Structural data (e.g., interatomic distances and coordination numbers) are obtained for the local environment of gallium and selenium, and are compared to modeling calculations performed using FEFF-8 software. |
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