V掺杂6H-SiC光导开关制备与性能研究 |
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引用本文: | 周天宇,刘学超,代冲冲,黄维,施尔畏. V掺杂6H-SiC光导开关制备与性能研究[J]. 强激光与粒子束, 2014, 26(4): 045043-277. DOI: 10.11884/HPLPB201426.045043 |
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作者姓名: | 周天宇 刘学超 代冲冲 黄维 施尔畏 |
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作者单位: | 1.中国科学院 上海硅酸盐研究所, 上海 201 800 |
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基金项目: | 中国科学院知识创新工程重要方向性项目(KGCX2-YW-206); 国家高技术发展计划项目; 上海市科技启明星项目(13QA1403800); 上海硅酸盐研究所创新基金项目(Y39ZC1110G) |
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摘 要: | 采用V掺杂半绝缘6H-SiC单晶衬底材料制备了平面电极型大功率SiC光导开关,用强度为150μJ/mm2、波长为355nm的脉冲激光对开关进行触发,在1~14kV的外加电压范围内对光导开关的耐压特性、导通电阻等性能进行了研究。结果表明:随着开关外加电压的升高,开关的电流峰值呈现不断增大的趋势,当开关外加电压为14kV时,电流峰值达185A,对应的光导开关峰值功率为2.59MW,开关的导通电阻约为22Ω。
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关 键 词: | 碳化硅 光导开关 导通电阻 峰值功率 |
收稿时间: | 2013-09-16 |
Fabrication and properties of V-doped semi-insulating 6H-SiC photoconductive semiconductor switch |
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Affiliation: | 1.Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 201800,China |
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Abstract: | High power photoconductive semiconductor switches (PCSSs) were fabricated on V-doped semi-insulating 6H-SiC single crystal. The 6H-SiC PCSS were measured by applying a bias voltage from 1 kV to 14 kV. The triggered laser was a 355 nm pulse laser with an energy density of 150 J/mm2. The peak photocurrent shows an increasing trend with improving the applied voltage. The peak photocurrent running through the PCSS and the calculated on-state resistance are 185 A and about 22 respectively when the applied voltage reaches 14 kV, and the corresponding peak power is 2.59 MW. |
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Keywords: | silicon carbide photoconductive semiconductor switch on-state resistance peak power |
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