Transients in semiconductor diodes at high injection levels |
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Authors: | V. I. Gaman S. A. Zaidman |
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Affiliation: | (1) Kuznetsov Siberian, Physicotechnical Institute, USSR |
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Abstract: | A theoretical calculation is presented of the duration of the first phase of the switching process from forward to reverse direction for a diode with a finite base, allowing for the finite surface-recombination velocity at the back contact at high injection levels. Formulas are obtained suitable for practical calculation of minority-carrier lifetime and surface recombination rate for junction diodes. |
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