Studies on the thermal decomposition of phosphides and arsenides of silicon and of germanium期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Studies on the thermal decomposition of phosphides and arsenides of silicon and of germanium

Authors:	Tommy Wadsten

Affiliation:	Department of Inorganic Chemistry, Arrhenius Laboratory, University of Stockholm, S104 05 Stockholm Sweden

Abstract:	The thermal decomposition in vacuum of phosphides and arsenides of silicon and germanium has been investigated using a simple set-up designed to resist the attack of the corrosive decomposition products. The phases GeP, GeAs, SiAs₂ and GeAs₂ disintegrate directly to the elements. X-ray amorphous intermediary products Si_≈5P and Si₆As are formed when SiP and SiAs are heated to 940 to 930°C, respectively. The electron diffraction pattern of Si₆As is reported.

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