| GaN 光电阴极的研究及其发展 |
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| 引用本文： | 李飙,常本康,徐源,杜晓晴,杜玉杰,王晓晖,张俊举.GaN 光电阴极的研究及其发展[J].物理学报,2011,60(8):88503-088503. |
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| 作者姓名： | 李飙 常本康 徐源 杜晓晴 杜玉杰 王晓晖 张俊举 |
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| 作者单位： | 1. 南京理工大学电子工程与光电技术学院,南京 210094;
2. 重庆大学光电工程学院,重庆 400030 |
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| 基金项目： | 国家自然科学基金 (批准号:60871012, 60701013)资助的课题. |
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| 摘 要： | GaN 光电阴极的理论研究主要集中在量子产额、电子能量分布和表面模型三个方面.国内对 GaN 光电阴极的研究尚处于起步阶段,存在基础理论不太明确、关键制备工艺欠成熟的问题.重点探讨了 GaN 光电阴极在发射机理、材料生长、表面净化、激活工艺的优化、变掺杂结构设计和稳定性等方面的研究动向、存在的相关问题及应采取的措施.根据实验结果提出了制备GaN光电阴极的可行性工艺流程.
关键词：
GaN
光电阴极
发展
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| 关 键 词： | GaN 光电阴极 发展 |
| 收稿时间： | 2010-10-20 |
Research and development of GaN photocathode |
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| Li Biao,Chang Ben-Kang,Xu Yuan,Du Xiao-Qing,Du Yu-Jie,Wang Xiao-Hui and Zhang Jun-Ju.Research and development of GaN photocathode[J].Acta Physica Sinica,2011,60(8):88503-088503. |
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| Authors: | Li Biao Chang Ben-Kang Xu Yuan Du Xiao-Qing Du Yu-Jie Wang Xiao-Hui and Zhang Jun-Ju |
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| Institution: | Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;College of Optoelectronic Engineering, Chongqing University, Chongqing 400030, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China |
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| Abstract: | Negative electron affinity GaN photocathode with greatly advanced photoelectricity performance is described. The research of GaN photocathode focuses on the three points, i. e. , quantum yield, electron energy distribution and surface model, in the last decade. The domestic research of GaN photocathode is still in its infancy, the basic theory is not established, and preparation technology is not mature. In this paper we review emission mechanism, material growth, surface cleaning, activation process optimization, varied-doping structure design and stability of GaN photocathode. The latest experimental results confirm that the fabrication technology of GaN photocathode is feasible. |
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| Keywords: | GaN photocathode development |
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