A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate |
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| Authors: | van Raay F Quay R Kiefer R Benkhelifa F Raynor B Pletschen W Kuri M Massler H Muller S Dammann M Mikulla M Schlechtweg M Weimann G |
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| Institution: | Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany; |
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| Abstract: | This work presents a two-stage high-power amplifier monolithic microwave integrated circuit (MMIC) operating between 9 GHz and 11 GHz based on a fully integrated AlGaN/GaN high electron mobility transistor (HEMT) technology on s.i. SiC substrate and is suitable for radar applications. The MMIC device with a chip size of 4.5/spl times/3 mm/sup 2/ yields a linear gain of 20 dB and a maximum pulsed saturated output power of 13.4 W at 10 GHz equivalent to 3.3 W/mm at V/sub DS/=35V, 10% duty cycle, and a gain compression level of 5 dB. Further, dc reliability data are given for the MMIC HEMT technology. |
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