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Effective potential approach to modeling of 25 nm MOSFET devices |
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| Authors: | C Ringhofer S S Ahmed D Vasileska |
| Institution: | a Department of Mathematics, Arizona State University, Tempe, AZ 85287-1804, USA;b Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706, USA |
| Abstract: | We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential that takes into account the Hartree and the barrier contributions. We study the influence of the quantum effects on the device output current. |
| Keywords: | Quantum thermodynamics Effective potentials |
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