Temperature-dependent characteristics of pulse-laser-deposited (Pb,Sr)TiO3 films at low temperatures |
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| Authors: | Jyh-Liang Wang Yi-Sheng Lai Bi-Shiou Chiou Chen-Chia Chou Trent Gwo-Yann Lee Huai-Yuan Tseng Chueh-Kuei Jan Huang-Chung Cheng |
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| Affiliation: | (1) Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, 30010, Taiwan, R.O.C.;(2) Department of Materials Science and Engineering, National United University, Miaoli, 36003, Taiwan, R.O.C.;(3) Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan, R.O.C. |
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| Abstract: | Pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) film on Pt/SiO2/Si at low substrate temperatures (Ts), ranging from 300–450 °C, has been investigated. As Ts increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance–electric field (C–E) hysteretic loops and a larger dielectric constant. The 350 °C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of ∼620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 °C. PACS 81.15.Fg; 77.22.Ch; 68.60.Dv |
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