Interaction effects in conductivity of Si inversion layers at intermediate temperatures |
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Authors: | Pudalov V M Gershenson M E Kojima H Brunthaler G Prinz A Bauer G |
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Institution: | Serin Physics Lab, Rutgers University, Piscataway New Jersey 08854, USA. |
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Abstract: | We compare the temperature dependence of resistivity rho(T) of Si-metal-oxide-semiconductor field-effect transistors with the recent theory by Zala et al. In this comparison, the effective mass m* and g* factor for mobile electrons have been determined from independent measurements. An anomalous increase of rho with temperature, which has been considered as a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance rho(B(axially)) is only qualitatively consistent with the theory; the lack of quantitative agreement indicates that the magnetoresistance is more sensitive to sample-specific effects than rho(T). |
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