| Multi-wafer 3C—SiC heteroepitaxial growth on Si(100) substrates |
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| 引用本文： | 孙国胜,刘兴昉,王雷,赵万顺,杨挺,吴海雷,闫果果,赵永梅,宁瑾,曾一平,李晋闽.Multi-wafer 3C—SiC heteroepitaxial growth on Si(100) substrates[J].中国物理 B,2010,19(8):614-618. |
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| 作者姓名： | 孙国胜 刘兴昉 王雷 赵万顺 杨挺 吴海雷 闫果果 赵永梅 宁瑾 曾一平 李晋闽 |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos. 60876003 and 60606003) and the Science Foundation of the Chinese Academy of Sciences (Grant No. yz200702). |
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| 摘 要： | <正>Epitaxial growth of semiconductor films in multiple-wafer mode is under vigorous development in order to improve yield output to meet the industry increasing demands.Here we report on results of the heteroepitaxial growth of multi-wafer 3C-SiC films on Si(100) substrates by employing a home-made horizontal hot wall low pressure chemical vapour deposition(HWLPCVD) system which was designed to be have a high-throughput,multi-wafer(3×2-inch) capacity. 3C-SiC film properties of the intra-wafer and the wafer-to-wafer including crystalline morphologies,structures and electronics are characterized systematically.The undoped and the moderate NH3 doped n-type 3C-SiC films with specular surface are grown in the HWLPCVD,thereafter uniformities of intra-wafer thickness and sheet resistance of the 3C-SiC films are obtained to be 6%~7%and 6.7%~8%,respectively,and within a run,the deviations of wafer-to-wafer thickness and sheet resistance are less than 1%and 0.8%,respectively.
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| 关 键 词： | 3C-SiC heteroepitaxial multi-wafer uniformity |
Multi-wafer 3Cben SiC heteroepitaxial growth on Si(100) substrates |
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| Sun Guo-Sheng,Liu Xing-Fang,Wang Lei,Zhao Wan-Shun,Yang Ting,Wu Hai-Lei,Yan Guo-Guo,Zhao Yong-Mei,Ning Jin,Zeng Yi-Ping and Li Jin-Min.Multi-wafer 3Cben SiC heteroepitaxial growth on Si(100) substrates[J].Chinese Physics B,2010,19(8):614-618. |
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| Authors: | Sun Guo-Sheng Liu Xing-Fang Wang Lei Zhao Wan-Shun Yang Ting Wu Hai-Lei Yan Guo-Guo Zhao Yong-Mei Ning Jin Zeng Yi-Ping and Li Jin-Min |
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| Institution: | ( a) Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ;b) Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ;c) State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China) |
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| Abstract: | 3C-SiC, heteroepitaxial, multi-wafer, uniformity |
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| Keywords: | 3C-SiC heteroepitaxial multi-wafer uniformity |
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