Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF<sub>2</sub> buffer layer期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF₂ buffer layer

Authors:	Ruijin Hong Jianda Shao Hongbo He Zhengxiu Fan

Institution:	^aResearch and Development Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China ^bGraduate School of Chinese Academy of Sciences, Beijing 100864, PR China

Abstract:	ZnO/MgF₂/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF₂ buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF₂ and ZnO than that between fused silica and ZnO.

Keywords:	A3 Physical vapor deposition B1 Oxides B2 Semiconducting II–VI materials
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