Microwave silicon Schottky-barrier field-effect transistor |
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| Authors: | Drangeid K.E. Jaggi R. Middelhoek S. Mohr TH. Moser A. Sasso G. Sommerhalder R. Wolf P. |
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| Affiliation: | IBM Zürich Research Laboratory, Rüschlikon, Switzerland; |
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| Abstract: | Schottky-barrier field-effect transistors have been realised in silicon epitaxial films on high-resistivity silicon substrates. The 1 ?m wide gates are produced by projection-masking techniques. The maximum transconductances observed are 42 mA/V per mm gate length; the maximum frequency of oscillation fmax was 8 GHz. |
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